1. 2019
  2. Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions

    Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 1 Jan 2019, International Conference on Micro- and Nano-Electronics 2018. Lukichev, V. F. & Rudenko, K. V. (eds.). The International Society for Optical Engineering, Vol. 11022. p. 28 8 p. 1102214. (Proceedings of SPIE; vol. 11022).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  3. Nanocrystalline diamond films heavily doped by boron: Structure, optical and electrical properties

    Volodin, V. A., Cherkova, S. G., Kumar, V., Sachkov, V. A., Mortet, V., Taylor, A., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Jan 2019, International Conference on Micro- and Nano-Electronics 2018. Lukichev, V. F. & Rudenko, K. V. (eds.). The International Society for Optical Engineering, Vol. 11022. p. 25 10 p. 110221G. (Proceedings of SPIE; vol. 11022).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  4. Silicon oxides and silicon nitrides: Structure, properties and applications in memristors

    Volodin, V. A., Kamaev, G. N., Kruchinin, V. N. & Gritsenko, V. A., 1 Jan 2019, International Conference on Micro- and Nano-Electronics 2018. Lukichev, V. F. & Rudenko, K. V. (eds.). The International Society for Optical Engineering, Vol. 11022. p. 33 8 p. 1102212. (Proceedings of SPIE; vol. 11022).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  5. Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures

    Kamaev, G. N., Cherkova, S. G., Gismatulin, A. A., Volodin, V. A. & Skuratov, V. A., 1 Jan 2019, International Conference on Micro- and Nano-Electronics 2018. Lukichev, V. F. & Rudenko, K. V. (eds.). The International Society for Optical Engineering, Vol. 11022. p. 71 6 p. 1102213. (Proceedings of SPIE; vol. 11022).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  6. 2018
  7. Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

    Tyschenko, I. E., Volodin, V. A., Cherkov, A. G., Stoffel, M., Rinnert, H., Vergnat, M. & Popov, V. P., 1 Dec 2018, In: Journal of Luminescence. 204, p. 656-662 7 p.

    Research output: Contribution to journalArticlepeer-review

  8. Aluminum-induced crystallization of silicon suboxide thin films

    Zamchiy, A. O., Baranov, E. A., Khmel, S. Y., Volodin, V. A., Vdovin, V. I. & Gutakovskii, A. K., 1 Sept 2018, In: Applied Physics A: Materials Science and Processing. 124, 9, 4 p., 646.

    Research output: Contribution to journalArticlepeer-review

  9. On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge: SiO2 Films

    Volodin, V. A., Rui, Z., Krivyakin, G. K., Antonenko, A. K., Stoffel, M., Rinnert, H. & Vergnat, M., 1 Sept 2018, In: Semiconductors. 52, 9, p. 1178-1187 10 p.

    Research output: Contribution to journalArticlepeer-review

  10. Nanoscale potential fluctuations in nonstoichiometrics tantalum oxide

    Gritsenko, V. A., Volodin, V. A., Perevalov, T. V., Kruchinin, V. N., Gerasimova, A. K., Aliev, V. S. & Prosvirin, I. P., 15 Aug 2018, In: Nanotechnology. 29, 42, p. 425202 9 p., 425202.

    Research output: Contribution to journalArticlepeer-review

  11. Nanostructuring few-layer graphene films with swift heavy ions for electronic application: Tuning of electronic and transport properties

    Nebogatikova, N. A., Antonova, I. V., Erohin, S. V., Kvashnin, D. G., Olejniczak, A., Volodin, V. A., Skuratov, A. V., Krasheninnikov, A. V., Sorokin, P. B. & Chernozatonskii, L. A., 14 Aug 2018, In: Nanoscale. 10, 30, p. 14499-14509 11 p.

    Research output: Contribution to journalArticlepeer-review

  12. Atomic and Electronic Structures of Metal-Rich Noncentrosymmetric ZrOx

    Gritsenko, V. A., Perevalov, T. V., Volodin, V. A., Kruchinin, V. N., Gerasimova, A. K. & Prosvirin, I. P., 1 Aug 2018, In: JETP Letters. 108, 4, p. 226-230 5 p.

    Research output: Contribution to journalArticlepeer-review

  13. Raman scattering in boron doped nanocrystalline diamond films: Manifestation of Fano interference and phonon confinement effect

    Volodin, V. A., Mortet, V., Taylor, A., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Aug 2018, In: Solid State Communications. 276, p. 33-36 4 p.

    Research output: Contribution to journalArticlepeer-review

  14. On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon

    Zhigunov, D. M., Kamaev, G. N., Kashkarov, P. K. & Volodin, V. A., 9 Jul 2018, In: Applied Physics Letters. 113, 2, 4 p., 023101.

    Research output: Contribution to journalArticlepeer-review

  15. Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method

    Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Volodin, V. A., Sharafutdinov, M. R. & Khmel, S. Y., 1 Jun 2018, In: Vacuum. 152, p. 319-326 8 p.

    Research output: Contribution to journalArticlepeer-review

  16. Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations

    Volodin, V. A., Sachkov, V. A. & Sinyukov, M. P., 1 Jun 2018, In: Semiconductors. 52, 6, p. 717-722 6 p.

    Research output: Contribution to journalArticlepeer-review

  17. Optical Properties of Nonstoichiometric Tantalum Oxide TaOx (x < 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

    Kruchinin, V. N., Volodin, V. A., Perevalov, T. V., Gerasimova, A. K., Aliev, V. S. & Gritsenko, V. A., 1 Jun 2018, In: Optics and Spectroscopy (English translation of Optika i Spektroskopiya). 124, 6, p. 808-813 6 p.

    Research output: Contribution to journalArticlepeer-review

  18. Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

    Volodin, V. A., Gritsenko, V. A. & Chin, A., 1 May 2018, In: Technical Physics Letters. 44, 5, p. 424-427 4 p.

    Research output: Contribution to journalArticlepeer-review

  19. New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

    Gorokhov, E. B., Astankova, K. N., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 May 2018, In: Semiconductors. 52, 5, p. 628-631 4 p.

    Research output: Contribution to journalArticlepeer-review

  20. Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

    Tyschenko, I. E., Krivyakin, G. K. & Volodin, V. A., 1 Feb 2018, In: Semiconductors. 52, 2, p. 268-272 5 p.

    Research output: Contribution to journalArticlepeer-review

  21. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A., Volodin, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 7 Jan 2018, In: Journal of Applied Physics. 123, 1, 8 p., 015304.

    Research output: Contribution to journalArticlepeer-review

  22. 2017
  23. Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Oct 2017, In: Semiconductors. 51, 10, p. 1370-1376 7 p.

    Research output: Contribution to journalArticlepeer-review

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