New Method of Porous Ge Layer Fabrication › Research Explorer

DOI

https://doi.org/10.1134/S1063782618050111
Final published version

E. B. Gorokhov
K. N. Astankova
I. A. Azarov
V. A. Volodin
A. V. Latyshev

Original language	English
Pages (from-to)	628-631
Number of pages	4
Journal	Semiconductors
Volume	52
Issue number	5
DOIs	https://doi.org/10.1134/S1063782618050111
Publication status	Published - 1 May 2018

OECD FOS+WOS

ID: 12798892