Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure › Research Explorer

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Ion-Beam Synthesis of the Crystalline Ge Phase in SiO_xN_y Films upon Annealing under High Pressure

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782618020215
Final published version

I. E. Tyschenko
G. K. Krivyakin
V. A. Volodin

Original language	English
Pages (from-to)	268-272
Number of pages	5
Journal	Semiconductors
Volume	52
Issue number	2
DOIs	https://doi.org/10.1134/S1063782618020215
Publication status	Published - 1 Feb 2018

OECD FOS+WOS

Research areas

PHOTOLUMINESCENCE, SIO2-FILMS, SILICON, LIGHT

ID: 10453868