Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method › Research Explorer

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Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.vacuum.2018.03.055
Final published version

A. O. Zamchiy
E. A. Baranov
I. E. Merkulova
V. A. Volodin
M. R. Sharafutdinov
S. Ya Khmel

Original language	English
Pages (from-to)	319-326
Number of pages	8
Journal	Vacuum
Volume	152
DOIs	https://doi.org/10.1016/j.vacuum.2018.03.055
Publication status	Published - 1 Jun 2018

Research areas

Amorphous silicon nanoclusters, Chemical vapor deposition, Electron beam plasma, Nanocrystalline silicon, Photoluminescence, Silicon suboxide thin films, MATRIX, SI NANOCRYSTALS, PHOTOLUMINESCENCE, CONSTANTS, LAYERS, TEMPERATURE, OXIDES, THICKNESS

OECD FOS+WOS

ID: 12282972