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Nanocrystalline diamond films heavily doped by boron: Structure, optical and electrical properties

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

DOI

https://doi.org/10.1117/12.2521498
Final published version

V. A. Volodin
S. G. Cherkova
V. Kumar
V. A. Sachkov
V. Mortet
A. Taylor
Z. Remes
T. H. Stuchliková
J. Stuchlik

Original language	English
Title of host publication	International Conference on Micro- and Nano-Electronics 2018
Editors	Vladimir F. Lukichev, Konstantin V. Rudenko
Publisher	SPIE
Number of pages	10
Volume	11022
ISBN (Electronic)	9781510627093
DOIs	https://doi.org/10.1117/12.2521498
Publication status	Published - 1 Jan 2019
Event	International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 - Zvenigorod, Russian Federation Duration: 1 Oct 2018 → 5 Oct 2018

Publication series

Name	Proceedings of SPIE
Publisher	SPIE-INT SOC OPTICAL ENGINEERING
Volume	11022
ISSN (Print)	0277-786X

Conference

Conference	International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018
Country/Territory	Russian Federation
City	Zvenigorod
Period	01.10.2018 → 05.10.2018

Research areas

Fano interference, Nanocrystalline boron doped diamond films, phonon confinement, Raman scattering, transmittance electrodes, RAMAN-SPECTRA, PHONON CONFINEMENT MODEL, SI, FANO INTERFERENCE, ELECTRODES

ID: 19039903