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Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1063/1.5009720
Final published version

A. A. Shklyaev
V. A. Volodin
M. Stoffel
H. Rinnert
M. Vergnat

Original language	English
Article number	015304
Number of pages	8
Journal	Journal of Applied Physics
Volume	123
Issue number	1
DOIs	https://doi.org/10.1063/1.5009720
Publication status	Published - 7 Jan 2018

Research areas

DISLOCATION-RELATED PHOTOLUMINESCENCE, OPTICAL-PROPERTIES, SILICON

OECD FOS+WOS

ID: 10420905