Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region › Research Explorer

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Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782617100128
Final published version

G. K. Krivyakin
V. A. Volodin
A. A. Shklyaev
V. Mortet
J. More-Chevalier
P. Ashcheulov
Z. Remes
T. H. Stuchliková
J. Stuchlik

Original language	English
Pages (from-to)	1370-1376
Number of pages	7
Journal	Semiconductors
Volume	51
Issue number	10
DOIs	https://doi.org/10.1134/S1063782617100128
Publication status	Published - 1 Oct 2017

Research areas

VOLUME FRACTION, QUANTUM DOTS, SOLAR-CELLS, GE ISLANDS, FILMS, PHASE, RAMAN, PHOTOLUMINESCENCE, PHOTOCONDUCTIVITY, NANOCRYSTALS

OECD FOS+WOS

ID: 9894238