Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions › Research Explorer

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Luminescent properties of GeO _x thin films and GeO/SiO ₂ heterostructures modified with swift heavy ions

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

DOI

https://doi.org/10.1117/12.2521696
Final published version

S. G. Cherkova
V. A. Volodin
V. A. Skuratov
M. Stoffel
H. Rinnert
M. Vergnat

Original language	English
Title of host publication	International Conference on Micro- and Nano-Electronics 2018
Editors	Vladimir F. Lukichev, Konstantin V. Rudenko
Publisher	SPIE
Number of pages	8
Volume	11022
ISBN (Electronic)	9781510627093
DOIs	https://doi.org/10.1117/12.2521696
Publication status	Published - 1 Jan 2019
Event	International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 - Zvenigorod, Russian Federation Duration: 1 Oct 2018 → 5 Oct 2018

Publication series

Name	Proceedings of SPIE
Publisher	SPIE-INT SOC OPTICAL ENGINEERING
Volume	11022
ISSN (Print)	0277-786X

Conference

Conference	International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018
Country/Territory	Russian Federation
City	Zvenigorod
Period	01.10.2018 → 05.10.2018

Research areas

photoluminescence, Si Ge O compounds, structural defect, swift heavy ions, IRRADIATION, PHOTOLUMINESCENCE, BLUE, NANOCRYSTALS, DEFECT, OPTICAL-PROPERTIES, OXIDES, SixGeyOz compounds

ID: 19039787