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  1. 2024

  2. Способ измерения коэффициента поглощения оксида германия средствами ИК-спектроскопии

    Володин, В. А. & Гейдт, П. В., 28 Dec 2024, Новосибирский государственный университет, Patent No. 123, 28 Dec 2024, Priority date 28 Dec 2024

    Research output: Patent › Know-how registration

  3. Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures

    Yushkov, I. D., Gismatulin, A. A., Prosvirin, I. P., Kamaev, G. N., Marin, D. V., Vergnat, M. & Volodin, V. A., 9 Dec 2024, In: Applied Physics Letters. 125, 24, 242901.

    Research output: Contribution to journal › Article › peer-review

  4. Nanosecond laser-induced crystallization of SiOx/Au bilayers in air and vacuum

    Samokhvalov, F., Zamchiy, A., Baranov, E., Fedotov, A., Starinskaya, E., Volodin, V., Tagiara, N. S. & Starinskiy, S., Dec 2024, In: Optics and Laser Technology. 179, 10 p., 111286.

    Research output: Contribution to journal › Article › peer-review

  5. Preparation of C12A7 nanoparticles by laser vaporization and their phase transformations during thermal treatment

    Kapishnikov, A., Snytnikov, V., Gerasimov, E., Volodin, V., Volodin, A. & Geydt, P., 22 Nov 2024, (E-pub ahead of print) In: Ceramics International.

    Research output: Contribution to journal › Article › peer-review

  6. Способ создания фоточувствительной поверхностно-барьерной структуры

    Володин, В. А., Камаев, Г. Н. & Хамуд Гайсаа Аббас, 5 Nov 2024, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 2829701, 18 Jul 2024, Priority date 18 Jul 2024, Priority No. 2024120173

    Research output: Patent › Patent for invention

  7. Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis

    Tyschenko, I., Gutakovskii, A., Zhang, R., Vdovin, V., Volodin, V. & Popov, V., 15 Oct 2024, In: Materials Letters. 373, 3 p., 137114.

    Research output: Contribution to journal › Article › peer-review

  8. Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO2] Films Using Electron Beam Annealing

    Konstantinov, V. O., Baranov, E. A., Fan, Z., Shchukin, V. G., Zamchiy, A. O. & Volodin, V. A., 18 Sept 2024, In: Technical Physics. 69, 4, p. 898-905 8 p.

    Research output: Contribution to journal › Article › peer-review

  9. Фоточувствительная поверхностно-барьерная структура

    Володин, В. А., Камаев, Г. Н. & Хамуд, Г. А., 28 Aug 2024, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 228438, 18 Jul 2024, Priority date 18 Jul 2024, Priority No. 2024120174

    Research output: Patent › Patent for utility model

  10. Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation

    Milakhin, D., Malin, T., Mansurov, V., Maidebura, Y., Bashkatov, D., Milekhin, I., Goryainov, S., Volodin, V., Loshkarev, I., Vdovin, V., Gutakovskii, A., Ponomarev, S. & Zhuravlev, K., 23 Jul 2024, In: Surfaces and Interfaces. 51, 14 p., 104817.

    Research output: Contribution to journal › Article › peer-review

  11. Kinetic study of GeOx amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy

    帆张, Володин, В. А., Астанкова, К. Н., Shvets, P. V., Goikhman, A. Y. & Vergnat, M., 1 May 2024, In: Journal of Non-Crystalline Solids. 631, 8 p., 122929.

    Research output: Contribution to journal › Article › peer-review

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