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  1. 2026

  2. Способ получения элемента энергонезависимой резистивной памяти

    Володин, В. А., Камаев, Г. Н. & Чэн, Н., 31 Mar 2026, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 2859309, 5 Sept 2025, Priority date 5 Sept 2025, Priority No. 2025124516

    Research output: Patent › Patent for invention

  3. Программа для моделирования вольтфарадных характеристик структур металл-диэлектрик-полупроводник в случае обеднения

    Володин, В. А., Климов, Б. А. & Попов, Д. К., 20 Mar 2026, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 2026617754, 17 Mar 2026, Priority date 17 Mar 2026, Priority No. 2026616882

    Research output: Patent › Software registration

  4. 2025

  5. Многоуровневая мемристорная структура на основе аморфного кремния

    Камаев, Г. Н., Володин, В. А. & Чэн, Н., 12 Dec 2025, Роспатент - Федеральная служба по интеллектуальной собственности, Patent No. 239675, 5 Sept 2025, Priority date 5 Sept 2025, Priority No. 2025124514

    Research output: Patent › Patent for utility model

  6. Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si

    Yushkov, I., Gismatulin, A., Kamaev, G., Vergnat, M. & Volodin, V. A., Dec 2025, In: Russian Microelectronics. 54, 8, p. 842-847 6 p.

    Research output: Contribution to journal › Article › peer-review

  7. Investigation of the Conduction Type of Nonstoichiometric Germanosilicate Glass Films

    Hamoud, G. A., Kamaev, G. N., Vergnat, M. & Volodin, V. A., Dec 2025, In: Russian Microelectronics. 54, 8, p. 1088-1096 9 p.

    Research output: Contribution to journal › Article › peer-review

  8. Study of localized phonon in ultrananocrystalline diamond films investigated by Raman spectroscopy

    Kumar, N., Kozakov, A. T., Panda, K., Nikolskii, A. V., Milekhin, I. A., Khamatdinov, E. U., Volodin, V. A., Goryainov, S. V. & Milekhin, A. G., Dec 2025, In: Diamond and Related Materials. 160, 20 p., 112941.

    Research output: Contribution to journal › Article › peer-review

  9. Evaluation of ultrananocrystalline diamond size by UV Raman spectroscopy and a phonon confinement model

    Kumar, N., Panda, K., Kozakov, A. T., Nikolskii, A. V., Volodin, V. A. & Goryainov, S. V., 29 Oct 2025, In: Physical chemistry chemical physics : PCCP. 27, 42, p. 22746-22754 9 p.

    Research output: Contribution to journal › Article › peer-review

  10. Femtosecond Laser Crystallization of Ultrathin a-Ge Films in Multilayer Stacks with Silicon Layers

    Cheng, Y., Bulgakov, A. V., Bulgakova, N. M., Beránek, J., Kacyuba, A. V. & Volodin, V. A., 16 Oct 2025, In: Applied Sciences. 15, 20, p. 11082

    Research output: Contribution to journal › Article › peer-review

  11. Nucleation and structure evolution of InSb nanocrystals during the ion-beam synthesis at the Si/SiO2 interface of a silicon-on-insulator substrate

    Tyschenko, I., Gutakovskii, A., Shvets, P., Goikhman, A., Zhang, R., Vdovin, V., Volodin, V. & Popov, V., Oct 2025, In: Journal of Alloys and Compounds. 1042, 183938.

    Research output: Contribution to journal › Article › peer-review

  12. Optical Phonons in the InSb Nanocrystals Ion-Beam Synthesized at the Bounding Si/SiO$${}_{\mathbf{2}}$$ Interface of Silicon-on-Insulator Structures

    Zhang, R., Tyschenko, I. E., Gutakovskii, A. K., Volodin, V. A. & Popov, V. P., 29 Sept 2025, In: Optoelectronics, Instrumentation and Data Processing. 61, 3, p. 369-375 7 p.

    Research output: Contribution to journal › Article › peer-review

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