1. 2017
  2. Photogalvanic probing of helical edge channels in two-dimensional HgTe topological insulators

    Dantscher, K. M., Kozlov, D. A., Scherr, M. T., Gebert, S., Bärenfänger, J., Durnev, M. V., Tarasenko, S. A., Bel'Kov, V. V., Mikhailov, N. N., Dvoretsky, S. A., Kvon, Z. D., Ziegler, J., Weiss, D. & Ganichev, S. D., 8 May 2017, In: Physical Review B. 95, 20, 5 p., 201103.

    Research output: Contribution to journalArticlepeer-review

  3. Nanoantenna-assisted plasmonic enhancement of IR absorption of vibrational modes of organic molecules

    Milekhin, A. G., Cherkasova, O., Kuznetsov, S. A., Milekhin, I. A., Rodyakina, E. E., Latyshev, A. V., Banerjee, S., Salvan, G. & Zahn, D. R. T., 3 May 2017, In: Beilstein Journal of Nanotechnology. 8, 1, p. 975-981 7 p.

    Research output: Contribution to journalArticlepeer-review

  4. Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

    Zhuravlev, A. G., Khoroshilov, V. S. & Alperovich, V. L., 1 May 2017, In: JETP Letters. 105, 10, p. 686-690 5 p.

    Research output: Contribution to journalArticlepeer-review

  5. Thermodynamic and kinetic roughening: Monte Carlo simulation and experiment on GaAs

    Kazantsev, D. M., Akhundov, I. O., Kozhukhov, A. S. & Alperovich, V. L., 11 Apr 2017, In: Journal of Physics: Conference Series. 816, 1, 5 p., 012008.

    Research output: Contribution to journalConference articlepeer-review

  6. Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6

    Klimovskikh, I. I., Sostina, D., Petukhov, A., Rybkin, A. G., Eremeev, S. V., Chulkov, E. V., Tereshchenko, O. E., Kokh, K. A. & Shikin, A. M., 5 Apr 2017, In: Scientific Reports. 7, p. 45797 6 p., 45797.

    Research output: Contribution to journalArticlepeer-review

  7. Quantum capacitance of a three-dimensional topological insulator based on HgTe

    Kozlov, D. A., Bauer, D., Ziegler, J., Fischer, R., Savchenko, M. L., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Weiss, D., 1 Apr 2017, In: Low Temperature Physics. 43, 4, p. 430-436 7 p.

    Research output: Contribution to journalArticlepeer-review

  8. Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

    Yakimov, A. I., Kirienko, V. V., Armbrister, V. A. & Dvurechenskii, A. V., 1 Apr 2017, In: JETP Letters. 105, 7, p. 426-429 4 p.

    Research output: Contribution to journalArticlepeer-review

  9. Analytical theory for charge carrier recombination in blend organic solar cells

    Nenashev, A. V., Wiemer, M., Dvurechenskii, A. V., Kulik, L. V., Pevtsov, A. B., Gebhard, F., Koch, M. & Baranovskii, S. D., 28 Mar 2017, In: Physical Review B. 95, 10, 12 p., 104207.

    Research output: Contribution to journalArticlepeer-review

  10. Elastic strain field due to an inclusion of a polyhedral shape with a non-uniform lattice misfit

    Nenashev, A. V. & Dvurechenskii, A. V., 28 Mar 2017, In: Journal of Applied Physics. 121, 12, 19 p., 125102.

    Research output: Contribution to journalArticlepeer-review

  11. Surface-Enhanced Infrared Absorption by Optical Phonons in Nanocrystal Monolayers on Au Nanoantenna Arrays

    Milekhin, A. G., Kuznetsov, S. A., Sveshnikova, L. L., Duda, T. A., Milekhin, I. A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 16 Mar 2017, In: Journal of Physical Chemistry C. 121, 10, p. 5779-5786 8 p.

    Research output: Contribution to journalArticlepeer-review

  12. AlN/GaN heterostructures for normally-off transistors

    Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Tereshenko, O. E., Abgaryan, K. K., Reviznikov, D. L., Zemlyakov, V. E., Egorkin, V. I., Parnes, Y. M., Tikhomirov, V. G. & Prosvirin, I. P., 1 Mar 2017, In: Semiconductors. 51, 3, p. 379-386 8 p.

    Research output: Contribution to journalArticlepeer-review

  13. Charge transport in thin hafnium and zirconium oxide films

    Islamov, D. R., Gritsenko, V. A. & Chin, A., 1 Mar 2017, In: Optoelectronics, Instrumentation and Data Processing. 53, 2, p. 184-189 6 p.

    Research output: Contribution to journalArticlepeer-review

  14. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journalArticlepeer-review

  15. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journalArticlepeer-review

  16. Local anodic oxidation of solid GeO films: The nanopatterning possibilities

    Astankova, K. N., Gorokhov, E. B., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 Mar 2017, In: Surfaces and Interfaces. 6, p. 56-59 4 p.

    Research output: Contribution to journalArticlepeer-review

  17. Giant microwave-induced B -periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact

    Levin, A. D., Mikhailov, S. A., Gusev, G. M., Kvon, Z. D., Rodyakina, E. E. & Latyshev, A. V., 23 Feb 2017, In: Physical Review B. 95, 8, 4 p., 081408.

    Research output: Contribution to journalArticlepeer-review

  18. Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

    Zhuravlev, A. G. & Alperovich, V. L., 15 Feb 2017, In: Applied Surface Science. 395, p. 3-8 6 p.

    Research output: Contribution to journalArticlepeer-review

  19. Ultrafast energy- and momentum-resolved surface Dirac photocurrents in the topological insulator Sb2Te3

    Kuroda, K., Reimann, J., Kokh, K. A., Tereshchenko, O. E., Kimura, A., Güdde, J. & Höfer, U., 2 Feb 2017, In: Physical Review B. 95, 8, 5 p., 081103.

    Research output: Contribution to journalArticlepeer-review

  20. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journalArticlepeer-review

  21. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Feb 2017, In: Semiconductors. 51, 2, p. 203-206 4 p.

    Research output: Contribution to journalArticlepeer-review

  22. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journalArticlepeer-review

  23. Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

    Sitnikov, S. V., Latyshev, A. V. & Kosolobov, S. S., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 196-201 6 p.

    Research output: Contribution to journalArticlepeer-review

  24. AlInAs quantum dots

    Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, In: JETP Letters. 105, 2, p. 103-109 7 p.

    Research output: Contribution to journalArticlepeer-review

  25. Atomic Processes on the Silicon Surface

    Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 189-221 33 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  26. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 223-253 31 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  27. Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices

    Zhdanov, E. Y., Pogosov, A. G., Budantsev, M. V., Pokhabov, D. A. & Bakarov, A. K., 1 Jan 2017, In: Semiconductors. 51, 1, p. 8-13 6 p.

    Research output: Contribution to journalArticlepeer-review

  28. Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques

    Islamov, D. R., Gritsenko, V. A. & Lebedev, M. S., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 265-270 6 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  29. Electron Transport: From Nanostructures to Nanoelectromechanical Systems

    Pogosov, A. G., Budantsev, M. V., Shevyrin, A. A., Zhdanov, E. Y. & Pokhabov, D. A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 101-129 29 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  30. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

    Alperovich, V. L., Akhundov, I. O., Kazantsev, D. M., Rudaya, N. S., Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 255-277 23 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  31. Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography

    Utkin, D., Shklyev, A., Tsarev, A., Latyshev, A. & Nasimov, D., 1 Jan 2017, In: Physics Procedia. 86, p. 127-130 4 p.

    Research output: Contribution to journalConference articlepeer-review

  32. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

    Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 131-155 25 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  33. Oxygen polyvacancies as conductive filament in zirconia: First principle simulation

    Perevalov, T. V. & Islamov, D. R., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 357-362 6 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  34. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  35. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  36. Silicon-Based Nanoheterostructures With Quantum Dots

    Dvurechenskii, A. V. & Yakimov, A. I., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 59-99 41 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  37. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

    Shklyaev, A. A., Romanyuk, K. N., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 325-344 20 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  38. The charge trap density evolution in wake-up and fatigue modes of FRAM

    Islamov, D. R., Orlov, O. M., Gritsenko, V. A. & Krasnikov, G. J., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 279-281 3 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  39. The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing)

    Dvurechenskii, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 367-381 15 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  40. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

    Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Aliev, V. S., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V. & Chin, A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 493-504 12 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  41. Two-Dimensional Semimetal in HgTe-Based Quantum Wells

    Kvon, Z. D., Olshanetsky, E. B., Kozlov, D. A., Mikhailov, N. N. & Dvoretsky, S. A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 29-48 20 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  42. Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

    Fedina, L. I., Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 383-407 25 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  43. 2016
  44. Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime

    Kvon, Z. D., Dantscher, K. -M., Scherr, M. -T., Yaroshevich, A. S. & Mikhailov, N. N., 1 Nov 2016, In: JETP Letters. 104, 10, p. 716-720 5 p.

    Research output: Contribution to journalArticlepeer-review

  45. Application of surface-enhanced infrared spectroscopy for steroids analysis

    Cherkasova, O. P., Milekhin, A. G., Milekhin, I. A., Kuznetsov, S. A., Rodyakina, E. E. & Latyshev, A. V., 23 Aug 2016, Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., p. S229 (Proceedings - 2016 International Conference Laser Optics, LO 2016).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  46. Three-dimensional non-linear complex model of dynamic memristor switching

    Chernov, A. A., Islamov, D. R., Pik'nik, A. A., Perevalov, T. V. & Gritsenko, V. A., 1 Jan 2016, NONVOLATILE MEMORIES 5. Karim, Z., Kobayashi, K., Shima, H., Bersuker, G., Shingubara, S., Saito, Y., Park, J. G., Magyari-Kope, B., Kubota, H. & Goux, L. (eds.). 32 ed. Electrochemical society, p. 95-104 10 p. (ECS Transactions; vol. 75, no. 32).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  47. Localized surface plasmons in structures with linear Au nanoantennas on a SiO2/Si surface

    Milekhin, I. A., Kuznetsov, S. A., Rodyakina, E. E., Milekhin, A. G., Latyshev, A. V. & Zahn, D. R. T., 2016, In: Beilstein Journal of Nanotechnology. 7, 1, p. 1519-1526 8 p.

    Research output: Contribution to journalArticlepeer-review

  48. 2012
  49. Formation of DNA molecules ordered systems on silicon surfaces

    Matkhonova, E. Y., Utkin, D. E., Kozhukhov, A. S., Sheglov, D. V., Nasimov, D. A. & Latyshev, A. V., 2012, 2012 13th Annual International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM'2012 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 13-15 3 p. 6310204. (International Workshop and Tutorials on Electron Devices and Materials, EDM - Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Previous 1...5 6 7 8 9 Next

ID: 3084764