Geometric and electronic structure of the cs-doped Bi2Se3(0001) surface › Research Explorer

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Geometric and electronic structure of the cs-doped Bi₂Se₃(0001) surface

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DOI

https://doi.org/10.1103/PhysRevB.95.205429
Final published version

M. M. Otrokov
A. Ernst
K. Mohseni
H. Fulara
S. Roy
G. R. Castro
J. Rubio-Zuazo
A. G. Ryabishchenkova
K. A. Kokh
O. E. Tereshchenko
Z. S. Aliev
M. B. Babanly
E. V. Chulkov
H. L. Meyerheim
S. S.P. Parkin

Original language	English
Article number	205429
Number of pages	9
Journal	Physical Review B
Volume	95
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.95.205429
Publication status	Published - 22 May 2017

Research areas

SINGLE DIRAC CONE, TOPOLOGICAL INSULATORS, AB-INITIO, INTERFACE, BI2TE3, GROWTH, STATE

OECD FOS+WOS

ID: 15989408