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Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

Research output: Contribution to journal › Article › peer-review

Semiconductor Physics Section

DOI

https://doi.org/10.1134/S106378261702021X
Final published version

S. V. Sitnikov
S. S. Kosolobov
A. V. Latyshev

Original language	English
Pages (from-to)	203-206
Number of pages	4
Journal	Semiconductors
Volume	51
Issue number	2
DOIs	https://doi.org/10.1134/S106378261702021X
Publication status	Published - 1 Feb 2017

Research areas

PHASE-TRANSITION, SUBLIMATION, SURFACES, REM

OECD FOS+WOS

ID: 10312175