Semiconductor Physics Section

Исследовательский центр в сфере искусственного интеллекта НГУ

Research output

  1. Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride

    Research output: Contribution to journalArticlepeer-review

  2. CPU vs RAM in the Issue of ab initio Simulations of Doped Hafnium Oxide for RRAM and FRAM

    Research output: Contribution to journalArticlepeer-review

  3. Optimal Structure of Lanthanum-Doped Hafnium Oxide: First-Principle Modeling

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

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ID: 3435182