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AlN/GaN heterostructures for normally-off transistors

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782617030277
Final published version

K. S. Zhuravlev
T. V. Malin
V. G. Mansurov
O. E. Tereshenko
K. K. Abgaryan
D. L. Reviznikov
V. E. Zemlyakov
V. I. Egorkin
Ya M. Parnes
V. G. Tikhomirov
I. P. Prosvirin

Original language	English
Pages (from-to)	379-386
Number of pages	8
Journal	Semiconductors
Volume	51
Issue number	3
DOIs	https://doi.org/10.1134/S1063782617030277
Publication status	Published - 1 Mar 2017

Research areas

ELECTRON-MOBILITY TRANSISTORS, ALGAN/GAN HETEROSTRUCTURES, HEMTS, ENHANCEMENT, MODE, VOLTAGE, F(T)

OECD FOS+WOS

ID: 9562104