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Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.apsusc.2017.02.062
Final published version

I. O. Akhundov
D. M. Kazantsev
V. L. Alperovich
D. V. Sheglov
A. S. Kozhukhov
A. V. Latyshev

Original language	English
Pages (from-to)	307-311
Number of pages	5
Journal	Applied Surface Science
Volume	406
DOIs	https://doi.org/10.1016/j.apsusc.2017.02.062
Publication status	Published - 1 Jun 2017

Research areas

Atomic steps, GaAs, Local oxidation, Monte Carlo simulation, Surface smoothing, SILICON, NANOSTRUCTURES, SI(111), MICROSCOPY, GAAS, GROWTH, MONTE-CARLO-SIMULATION, NUCLEATION, EQUILIBRIUM CONDITIONS

OECD FOS+WOS

ID: 10278327