Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

Research output: Contribution to journal › Article › peer-review

A1. Diffusion, A1. Mass transfer, A1. Surface processes, B2. Semiconducting silicon, VICINAL SURFACES, SILICON, SUBLIMATION, REFLECTION ELECTRON-MICROSCOPY, Mass transfer, TEMPERATURE, PHASE-TRANSITION, GROWTH, Semiconducting silicon, SCANNING-TUNNELING-MICROSCOPY, Surface processes, Diffusion, IN-SITU, TRANSFORMATIONS

ID: 10352102