2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

Research output: Contribution to journal › Article › peer-review

A1. Morphological stability, A1. Nucleation, A1. Surface processes, A3. Molecular beam epitaxy, B2. Semiconducting silicon, MOLECULAR-BEAM, ATOMIC PROCESSES, Nucleation, MAGIC ISLANDS, Morphological stability, HOMOEPITAXY, SUBMONOLAYER EPITAXY, 2-DIMENSIONAL NUCLEATION, TEMPERATURES, KINETICS, Molecular beam epitaxy, Semiconducting silicon, SCANNING-TUNNELING-MICROSCOPY, THIN-FILM GROWTH, Surface processes

ID: 10319890