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Determination of trap density in hafnia films produced by two atomic layer deposition techniques

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.mee.2017.05.004
Final published version

D. R. Islamov
V. A. Gritsenko
M. S. Lebedev

Original language	English
Pages (from-to)	104-107
Number of pages	4
Journal	Microelectronic Engineering
Volume	178
DOIs	https://doi.org/10.1016/j.mee.2017.05.004
Publication status	Published - 25 Jun 2017

Research areas

Atomic layer deposition, Defects, Hafnium oxide, Oxygen vacancy, DIELECTRICS

OECD FOS+WOS

ID: 10191709