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  1. 2020

  2. Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators

    Shevyrin, A. A., Pogosov, A. G., Bakarov, A. K. & Shklyaev, A. A., 3 Feb 2020, In: Applied Physics Letters. 116, 5, 5 p., 053104.

    Research output: Contribution to journal › Article › peer-review

  3. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journal › Article › peer-review

  4. 2019

  5. Universal building block for (1 1 0)-family silicon and germanium surfaces

    Zhachuk, R. A. & Shklyaev, A. A., 15 Nov 2019, In: Applied Surface Science. 494, p. 46-50 5 p.

    Research output: Contribution to journal › Article › peer-review

  6. Suspended quantum point contact with triple channel selectively driven by side gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., 7 Oct 2019, In: Applied Physics Letters. 115, 15, 152101.

    Research output: Contribution to journal › Article › peer-review

  7. Nanoscale characterization of photonic metasurface made of lens-like SiGe Mie-resonators formed on Si (100) substrate

    Poborchii, V., Shklyaev, A., Bolotov, L. & Uchida, N., 28 Sept 2019, In: Journal of Applied Physics. 126, 12, 11 p., 123102.

    Research output: Contribution to journal › Article › peer-review

  8. On-chip Piezoelectric Actuation of Nanomechanical Resonators Containing a Two-dimensional Electron Gas

    Shevyrin, A. A., Bakarov, A. K., Shklyaev, A. A., Arakcheev, A. S., Kurosu, M., Yamaguchi, H. & Pogosov, A. G., 1 Feb 2019, In: JETP Letters. 109, 4, p. 261-265 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. 2018

  11. Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

    Shklyaev, A. A., Bolotov, L., Poborchii, V., Tada, T. & Romanyuk, K. N., 15 Aug 2018, In: Materials Science in Semiconductor Processing. 83, p. 107-114 8 p.

    Research output: Contribution to journal › Article › peer-review

  12. Shapes of the micron-sized SiGe islands grown on Si(100) in Dewetting Conditions

    Budazhapova, A. E. & Shklyaev, A. A., 13 Aug 2018, 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. IEEE Computer Society, Vol. 2018-July. p. 16-18 3 p. 8434951. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2018-July).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  13. The observation of the Aharonov-Bohm effect in suspended semiconductor ring interferometers

    Pokhabov, D. A., Pogosov, A. G., Shevyrin, A. A., Yu Zhdanov, E., Bakarov, A. K., Shklyaev, A. A., Ishutkin, S. V., Stepanenko, M. V. & Shesterikov, E. V., 2 Mar 2018, In: Journal of Physics: Conference Series. 964, 1, 5 p., 012008.

    Research output: Contribution to journal › Conference article › peer-review

  14. Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Shevyrin, A. A., Bakarov, A. K. & Shklyaev, A. A., 19 Feb 2018, In: Applied Physics Letters. 112, 8, 4 p., 082102.

    Research output: Contribution to journal › Article › peer-review

  15. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A., Volodin, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 7 Jan 2018, In: Journal of Applied Physics. 123, 1, 8 p., 015304.

    Research output: Contribution to journal › Article › peer-review

  16. Electrically controlled spin polarization in suspended GaAs quantum point contacts

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Shevyrin, A. A., Bakarov, A. K. & Shklyaev, A. A., 1 Jan 2018, In: Journal of Physics: Conference Series. 1124, 6, 061001.

    Research output: Contribution to journal › Conference article › peer-review

  17. 2017

  18. Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

    Dvurechenskii, A., Zinovieva, A., Zinovyev, V., Nenashev, A., Smagina, Z., Teys, S., Shklyaev, A., Erenburg, S., Trubina, S., Borodavchenko, O., Zhivulko, V. & Mudryi, A., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 6 p., 1700187.

    Research output: Contribution to journal › Article › peer-review

  19. Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

    Poborchii, V., Shklyaev, A., Bolotov, L., Uchida, N., Tada, T. & Utegulov, Z. N., 1 Dec 2017, In: Applied Physics Express. 10, 12, 4 p., 125501.

    Research output: Contribution to journal › Article › peer-review

  20. Submicron- and micron-sized SiGe island formation on Si(100) by dewetting

    Shklyaev, A. A. & Budazhapova, A. E., 30 Nov 2017, In: Thin Solid Films. 642, p. 345-351 7 p.

    Research output: Contribution to journal › Article › peer-review

  21. Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Oct 2017, In: Semiconductors. 51, 10, p. 1370-1376 7 p.

    Research output: Contribution to journal › Article › peer-review

  22. Electromechanical coupling in suspended nanomechanical resonators with a two-dimensional electron gas

    Shevyrin, A. A., Pogosov, A. G., Bakarov, A. K. & Shklyaev, A. A., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 4 p., 012043.

    Research output: Contribution to journal › Conference article › peer-review

  23. Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures

    Shklyaev, A. A. & Budazhapova, A. E., 1 Jan 2017, In: Materials Science in Semiconductor Processing. 57, p. 18-23 6 p.

    Research output: Contribution to journal › Article › peer-review

  24. Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography

    Utkin, D., Shklyev, A., Tsarev, A., Latyshev, A. & Nasimov, D., 1 Jan 2017, In: Physics Procedia. 86, p. 127-130 4 p.

    Research output: Contribution to journal › Conference article › peer-review

  25. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

    Shklyaev, A. A., Romanyuk, K. N., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 325-344 20 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  26. THE DEPOSITION OF GERMANIUM NANOPARTICLES ON HYDROGENATED AMORPHOUS SILICON

    Stuchlik, J., Volodin, V. A., Shklyaev, A. A., Stuchlikova, T. H., Ledinsky, M., Cermak, J., Kupcik, J., Fajgar, R., Mortet, V., More-Chevalier, J., Ashcheulov, P., Purkrt, A. & Remes, Z., 2017, 8TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2016). TANGER LTD, p. 133-137 5 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  27. 2011

  28. Технология получения высокоупорядоченной ступенчатой поверхности Si (111) -7x7

    Романюк, К. Н. & Шкляев, А. А., 25 Nov 2011, Редакционно-издательский центр НГУ, Patent No. 6, Priority date 22 Nov 2011

    Research output: Patent › Know-how registration

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