Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators › Research Explorer

DOI

https://doi.org/10.1063/1.5143636
Final published version

Original language	English
Article number	053104
Number of pages	5
Journal	Applied Physics Letters
Volume	116
Issue number	5
DOIs	https://doi.org/10.1063/1.5143636
Publication status	Published - 3 Feb 2020

Research areas

DX-CENTER, UNIAXIAL-STRESS, DONOR LEVELS, GAAS, SYMMETRY, CENTERS, QUANTUM

OECD FOS+WOS

ID: 23426976