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Submicron- and micron-sized SiGe island formation on Si(100) by dewetting

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1016/j.tsf.2017.09.045
Final published version

A. A. Shklyaev
A. E. Budazhapova

Original language	English
Pages (from-to)	345-351
Number of pages	7
Journal	Thin Solid Films
Volume	642
DOIs	https://doi.org/10.1016/j.tsf.2017.09.045
Publication status	Published - 30 Nov 2017

OECD FOS+WOS

Research areas

Dielectric particles, Si/Ge heterostructures, Solid-state dewetting, Surface morphology, THIN-FILMS, SIO2 COVERAGE, HIGH-TEMPERATURES, CONTACT-ANGLE, SILICON, NANOCRYSTALS, SI(001), GE ISLANDS, GERMANIUM, SURFACE

ID: 9869110