Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

Original language	English
Title of host publication	Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
Subtitle of host publication	Growth, Characterization, Properties and Applications
Editors	AV Latyshev, AV Dvurechenskii, AL Aseev
Publisher	Elsevier Science Publishing Company, Inc.
Pages	325-344
Number of pages	20
ISBN (Electronic)	9780128105139
ISBN (Print)	9780128105139
DOIs	https://doi.org/10.1016/B978-0-12-810512-2.00013-5
Publication status	Published - 1 Jan 2017

Name	Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications

Ge epitaxy on Si, High-temperature SiGe surface morphologies, Nanocontact epitaxy, Scanning tunneling microscopy, ISLANDS, NANOSTRUCTURES, SI(111), SI(001), SI SURFACES, STRANSKI-KRASTANOV GROWTH, QUANTUM DOTS, GERMANIUM, SHAPE TRANSITION, SCANNING-TUNNELING-MICROSCOPY, High-temperature Si Ge surface morphologies, High-temperature SixGe1-x surface morphologies

ID: 21753392