Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

Original language	English
Title of host publication	Advances in Semiconductor Nanostructures
Subtitle of host publication	Growth, Characterization, Properties and Applications
Editors	AV Latyshev, AV Dvurechenskii, AL Aseev
Publisher	Elsevier Science Publishing Company, Inc.
Pages	325-344
Number of pages	20
ISBN (Electronic)	9780128105139
ISBN (Print)	9780128105122
DOIs	https://doi.org/10.1016/B978-0-12-810512-2.00013-5
Publication status	Published - 1 Jan 2017

Ge epitaxy on Si, High-temperature SiGe surface morphologies, Nanocontact epitaxy, Scanning tunneling microscopy, ISLANDS, NANOSTRUCTURES, SI(111), SI(001), SI SURFACES, STRANSKI-KRASTANOV GROWTH, QUANTUM DOTS, GERMANIUM, SHAPE TRANSITION, SCANNING-TUNNELING-MICROSCOPY, High-temperature Si Ge surface morphologies

ID: 21753392