Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

Electromigration, Ge growth on Si(1 1 1), Nanostructures, Si/Ge heterostructures, Ge growth on Si(111), INSTABILITY, SUBLIMATION, GRAPHENE, SEMICONDUCTOR SURFACES, ANISOTROPY, GERMANIUM, SILICON NANOSTRUCTURES, SIGE ISLAND FORMATION, GROWTH, SCANNING-TUNNELING-MICROSCOPY

ID: 16632320