Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	107-114
Number of pages	8
Journal	Materials Science in Semiconductor Processing
Volume	83
DOIs	https://doi.org/10.1016/j.mssp.2018.04.026
Publication status	Published - 15 Aug 2018

High-temperature growth, Kelvin force microscopy, Lateral Si/Ge heterostructures, Raman microscopy, Surface potential distribution, HETEROSTRUCTURES, GRAPHENE, SI(100), GERMANIUM, SPECTROSCOPY, GE DEPOSITION, LATERAL NANOWIRES, STRESS, STRAIN, ISLAND FORMATION

ID: 12916429