Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	18-23
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	57
DOIs	https://doi.org/10.1016/j.mssp.2016.09.033
Publication status	Published - 1 Jan 2017

Dynamic equilibrium, Ge MBE on Si(100), High-temperature growth, Self-organization, Strain relaxation, 001 SURFACE, SILICON, SI(001), SI(111), MICROSCOPY, GE/SI(100) ISLANDS, QUANTUM DOTS, LAYERS, GERMANIUM, GROWTH

ID: 10351826