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  1. 2021

  2. Memory Properties of SiO x- and SiN x-Based Memristors

    Gritsenko, V. A., Gismatulin, A. A. & Orlov, O. M., Nov 2021, In: Nanobiotechnology reports. 16, 6, p. 722-731 10 p.

    Research output: Contribution to journal › Review article › peer-review

  3. Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux

    Dmitriev, D. V., Kolosovsky, D. A., Fedosenko, E. V., Toropov, A. I. & Zhuravlev, K. S., Nov 2021, In: Semiconductors. 55, 11, p. 823-827 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Charge Transport in Amorphous Silicon Nitride

    Novikov, Y. N. & Gritsenko, V. A., Oct 2021, In: Journal of Experimental and Theoretical Physics. 133, 4, p. 488-493 6 p., 13.

    Research output: Contribution to journal › Article › peer-review

  5. High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

    Zhuravlev, K. S., Gilinskii, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L. & Mikitchuk, K. B., Sept 2021, In: Technical Physics. 66, 9, p. 1072-1077 6 p., 34.

    Research output: Contribution to journal › Article › peer-review

  6. Light Emission by Monolayers of Molybdenum Disulfide

    Marchenko, A. V., Kurus, N. N., Kolosvetov, A. A. & Milekhin, A. G., Sept 2021, In: Optoelectronics, Instrumentation and Data Processing. 57, 5, p. 532-538 7 p., 12.

    Research output: Contribution to journal › Article › peer-review

  7. Transformation of the InP(001) surface upon annealing in an arsenic flux

    Dmitriev, D. V., Kolosovsky, D. A., Gavrilova, T. A., Gutakovskii, A. K., Toropov, A. I. & Zhuravlev, K. S., Aug 2021, In: Surface Science. 710, 121861.

    Research output: Contribution to journal › Article › peer-review

  8. InAs Islands Formation on the InP(001) during High-Temperature Annealing in an As Flux

    Kolosovsky, D., Dmitriev, D., Gavrilova, T., Toropov, A., Kozhukhov, A. & Zhuravlev, K., 30 Jun 2021, 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, p. 17-21 5 p. 9507627. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2021-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  9. Bipolar conductivity in ferroelectric La:HfZrO films

    Perevalov, T. V., Gismatulin, A. A., Gritsenko, V. A., Prosvirin, I. P., Mehmood, F., Mikolajick, T. & Schroeder, U., 28 Jun 2021, In: Applied Physics Letters. 118, 26, 262903.

    Research output: Contribution to journal › Article › peer-review

  10. Negative thermal expansion in one-dimension of a new double sulfate AgHo(SO4)2 with isolated SO4 tetrahedra

    Denisenko, Y. G., Atuchin, V. V., Molokeev, M. S., Wang, N., Jiang, X., Aleksandrovsky, A. S., Krylov, A. S., Oreshonkov, A. S., Sedykh, A. E., Volkova, S. S., Lin, Z., Andreev, O. V. & Müller-Buschbaum, K., 20 Jun 2021, In: Journal of Materials Science and Technology. 76, p. 111-121 11 p.

    Research output: Contribution to journal › Article › peer-review

  11. Atomic Structure and Optical Properties of Plasma Enhanced Chemical Vapor Deposited SiCOH Low-k Dielectric Film

    Kruchinin, V. N., Volodin, V. A., Rykhlitskii, S. V., Gritsenko, V. A., Posvirin, I. P., Shi, X. & Baklanov, M. R., Jun 2021, In: Optics and Spectroscopy. 129, 6, p. 645-651 7 p.

    Research output: Contribution to journal › Article › peer-review

  12. Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation

    Yen, T. J., Chin, A. & Gritsenko, V., Jun 2021, In: Nanomaterials. 11, 6, 1401.

    Research output: Contribution to journal › Article › peer-review

  13. The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

    Sonmez, F., Ardali, S., Lisesivdin, S. B., Malin, T., Mansurov, V., Zhuravlev, K. & Tiras, E., Jun 2021, In: Journal of Physics Condensed Matter. 33, 25, 255501.

    Research output: Contribution to journal › Article › peer-review

  14. Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility

    Antonova, I. V., Nebogatikova, N. A., Stepina, N. P., Volodin, V. A., Kirienko, V. V., Rybin, M. G., Obrazstova, E. D., Golyashov, V. A., Kokh, K. A. & Tereshchenko, O. E., May 2021, In: Journal of Materials Science. 56, 15, p. 9330–9343 14 p.

    Research output: Contribution to journal › Article › peer-review

  15. Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

    Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G. & Zhuravlev, K. S., 15 Apr 2021, In: Journal of Physics: Conference Series. 1851, 1, 012005.

    Research output: Contribution to journal › Conference article › peer-review

  16. Peculiarities of the AlN crystalline phase formation in a result of the electron-stimulated reconstruction transition (√31×√31)R ± 9° − (1 × 1)

    Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., Kozhukhov, A. S., Utkin, D. E. & Zhuravlev, K. S., 1 Mar 2021, In: Applied Surface Science. 541, 148548.

    Research output: Contribution to journal › Article › peer-review

  17. Charge Transport Mechanism in Atomic Layer Deposited Oxygen-Deficient TaOx Films

    Gismatulin, A., Gritsenko, V., Perevalov, T., Kuzmichev, D., Chernikova, A. & Markeev, A., Mar 2021, In: Physica Status Solidi (B) Basic Research. 258, 3, 6 p., 2000432.

    Research output: Contribution to journal › Article › peer-review

  18. Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films

    Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Aliev, V. S., Nadolinny, V. A. & Chin, A., Mar 2021, In: Materialia. 15, 100980.

    Research output: Contribution to journal › Article › peer-review

  19. Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part I—Crystals

    Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Yelisseyev, A. P., Pustovarov, V. A., Korolkov, I. V. & Lomonova, E. E., Mar 2021, In: Materialia. 15, 100979.

    Research output: Contribution to journal › Article › peer-review

  20. AlSb/InAs Heterostructures for Microwave Transistors

    Sukhanov, M. A., Bakarov, A. K. & Zhuravlev, K. S., Feb 2021, In: Technical Physics Letters. 47, 2, p. 139-142 4 p.

    Research output: Contribution to journal › Article › peer-review

  21. Charge Transport Mechanism and Trap Origin in Methyl-Terminated Organosilicate Glass Low-κ Dielectrics

    Perevalov, T. V., Gismatulin, A. A., Dolbak, A. E., Gritsenko, V. A., Trofimova, E. S., Pustovarov, V. A., Seregin, D. S., Vorotilov, K. A. & Baklanov, M. R., Feb 2021, In: Physica Status Solidi (A) Applications and Materials Science. 218, 4, 7 p., 2000654.

    Research output: Contribution to journal › Article › peer-review

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