The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures › Research Explorer

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The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al_0.3Ga_0.7N/AlN/GaN heterostructures

Research output: Contribution to journal › Article › peer-review

Лаборатория полупроводниковых и диэлектрических материалов ФФ

DOI

https://doi.org/10.1016/j.mssp.2020.105449
Final published version

F. Sonmez
S. Ardali
G. Atmaca
S. B. Lisesivdin
T. Malin
V. Mansurov
K. Zhuravlev
E. Tiras

Original language	English
Article number	105449
Number of pages	8
Journal	Materials Science in Semiconductor Processing
Volume	122
DOIs	https://doi.org/10.1016/j.mssp.2020.105449
Publication status	Published - Feb 2021

Research areas

AlGaN/GaN, Electron effective mass, Hall mobility, Longitudinal optical phonon energy, Longitudinal optical phonon relaxation time, Raman spectroscopy, ENERGY, DISPERSION, ALN SPACER, RAMAN-SCATTERING, TRANSPORT, EFFECTIVE-MASS, HALL-EFFECT MEASUREMENTS, SPECTROSCOPY, GAN, ACCUMULATION

OECD FOS+WOS

ID: 25688865