Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux › Research Explorer

DOI

https://doi.org/10.1134/S1063782621100080
Final published version

D. V. Dmitriev
D. A. Kolosovsky
E. V. Fedosenko
A. I. Toropov
K. S. Zhuravlev

Original language	English
Pages (from-to)	823-827
Number of pages	5
Journal	Semiconductors
Volume	55
Issue number	11
DOIs	https://doi.org/10.1134/S1063782621100080
Publication status	Published - Nov 2021

Research areas

annealing, arsenic, diffraction, indium phosphide, substitution

OECD FOS+WOS

2.05 MATERIALS ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY

ID: 35550921