High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures › Research Explorer

DOI

https://doi.org/10.1134/S1063784221070185
Final published version

K. S. Zhuravlev
A. M. Gilinskii
I. B. Chistokhin
N. A. Valisheva
D. V. Dmitriev
A. I. Toropov
M. S. Aksenov
A. L. Chizh
K. B. Mikitchuk

Original language	English
Article number	34
Pages (from-to)	1072-1077
Number of pages	6
Journal	Technical Physics
Volume	66
Issue number	9
DOIs	https://doi.org/10.1134/S1063784221070185
Publication status	Published - Sept 2021

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY

State classification of scientific and technological information

29 PHYSICS

ID: 35541624