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The effect of barrier layers on 2D electron effective mass in Al_0.3Ga_0.7N/AlN/GaN heterostructures

Research output: Contribution to journal › Article › peer-review

Лаборатория полупроводниковых и диэлектрических материалов ФФ

DOI

https://doi.org/10.1088/1361-648X/abf8d2
Final published version

F. Sonmez
S. Ardali
S. B. Lisesivdin
T. Malin
V. Mansurov
K. Zhuravlev
E. Tiras

Original language	English
Article number	255501
Journal	Journal of Physics Condensed Matter
Volume	33
Issue number	25
DOIs	https://doi.org/10.1088/1361-648X/abf8d2
Publication status	Published - Jun 2021

Research areas

AlGaN/GaN heterostructures, Electron effective mass, Passivation layer, Shubnikov de Haas oscillation

OECD FOS+WOS

2.05 MATERIALS ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY

ID: 34033600