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Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation

Research output: Contribution to journal › Article › peer-review

Лаборатория полупроводниковых и диэлектрических материалов ФФ

DOI

https://doi.org/10.3390/nano11061401
Final published version

Te Jui Yen
Albert Chin
Vladimir Gritsenko

Original language	English
Article number	1401
Journal	Nanomaterials
Volume	11
Issue number	6
DOIs	https://doi.org/10.3390/nano11061401
Publication status	Published - Jun 2021

OECD FOS+WOS

2.05 MATERIALS ENGINEERING
2.04 CHEMICAL ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY

Research areas

Ion implantation, Neuron mimicking device, SiNx RRAM

ID: 34033966