DOI

  • M. A. Sukhanov
  • A. K. Bakarov
  • K. S. Zhuravlev
Original languageEnglish
Pages (from-to)139-142
Number of pages4
JournalTechnical Physics Letters
Volume47
Issue number2
DOIs
Publication statusPublished - Feb 2021

    OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY
  • 1.03.UB PHYSICS, APPLIED

    Research areas

  • AlSb/InAs heterostructures, high electron mobility transistor, molecular beam epitaxy

ID: 28258159