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  1. 2026

  2. 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate

    Feklistov, K. V., Lemzyakov, A. G., Abramkin, D. S., Svit, K. A., Pugachev, A. M., Volodin, V. A., Marin, D. V., Spesivsev, E. V., Azarov, I. A., Safronov, L. N., Kochubey, S. A., Ershov, K. S., Kapishnikov, A. V., Shmakov, A. N., Shklyaev, A. A. & Zhivodkov, Y. A., 30 Jun 2026, In: Modern Electronic Materials. 12, 2, p. 95-102 8 p.

    Research output: Contribution to journal › Article › peer-review

  3. 2024

  4. Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

    Gulyaev, D. V., Abramkin, D. S., Dmitriev, D. V., Toropov, A. I., Kolosovsky, E. A., Ponomarev, S. A., Kurus, N. N., Milekhin, I. A. & Zhuravlev, K. S., 18 Nov 2024, In: Nanomaterials. 14, 22, 1842.

    Research output: Contribution to journal › Article › peer-review

  5. 2023

  6. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

    Abramkin, D. S., Petrushkov, M. O., Bogomolov, D. B., Emelyanov, E. A., Yesin, M. Y., Vasev, A. V., Bloshkin, A. A., Koptev, E. S., Putyato, M. A., Atuchin, V. V. & Preobrazhenskii, V. V., 28 Feb 2023, In: Nanomaterials. 13, 5, 910.

    Research output: Contribution to journal › Article › peer-review

  7. 2022

  8. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

    Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Komkov, O. S., Firsov, D. D., Vasev, A. V., Yesin, M. Y., Bakarov, A. K., Loshkarev, I. D., Gutakovskii, A. K., Atuchin, V. V. & Preobrazhenskii, V. V., 14 Dec 2022, In: Nanomaterials. 12, 24, 4449.

    Research output: Contribution to journal › Article › peer-review

  9. Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories

    Abramkin, D. S. & Atuchin, V. V., Nov 2022, In: Nanomaterials. 12, 21, 3794.

    Research output: Contribution to journal › Article › peer-review

  10. 2021

  11. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

    Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K. & Preobrazhenskiy, V. V., Feb 2021, In: Semiconductors. 55, 2, p. 194-201 8 p.

    Research output: Contribution to journal › Article › peer-review

  12. 2020

  13. Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

    Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Vasev, A. V., Loshkarev, D. I., Yesin, M. Y., Komkov, O. S., Firsov, D. D. & Preobrazhenskii, V. V., Dec 2020, In: Semiconductors. 54, 12, p. 1548-1554 7 p.

    Research output: Contribution to journal › Article › peer-review

  14. Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si/In2O3:Er films

    Feklistov, K. V., Lemzyakov, A. G., Prosvirin, I. P., Gismatulin, A. A., Shklyaev, A. A., Zhivodkov, Y. A., Krivyakin, G., Komonov, A. I., Kozhukhov, A. S., Spesivsev, E. V., Gulyaev, D. V., Abramkin, D. S., Pugachev, A. M., Esaev, D. G. & Sidorov, G. Y., Dec 2020, In: Materials Research Express. 7, 12, 11 p., 125903.

    Research output: Contribution to journal › Article › peer-review

  15. 2019

  16. GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., Emelyanov, E. A., Preobrazhenskii, V. V., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1143-1147 5 p.

    Research output: Contribution to journal › Article › peer-review

  17. Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

    Abramkin, D. S. & Shamirzaev, T. S., 1 May 2019, In: Semiconductors. 53, 5, p. 703-710 8 p.

    Research output: Contribution to journal › Article › peer-review

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