Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy › Research Explorer

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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782621020020
Final published version

D. S. Abramkin
M. O. Petrushkov
E. A. Emelyanov
A. V. Nenashev
M. Yu Yesin
A. V. Vasev
M. A. Putyato
D. B. Bogomolov
A. K. Gutakovskiy
V. V. Preobrazhenskiy

Original language	English
Pages (from-to)	194-201
Number of pages	8
Journal	Semiconductors
Volume	55
Issue number	2
DOIs	https://doi.org/10.1134/S1063782621020020
Publication status	Published - Feb 2021

Research areas

elastic strains, III–V compounds on silicon, InAs/GaP quantum wells, intermixing of materials, molecular-beam epitaxy, photoluminescence, surface morphology

OECD FOS+WOS

ID: 28003881