Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates › Research Explorer

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Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

Research output: Contribution to journal › Article › peer-review

Section of Automation of Physical and Technical Research

DOI

https://doi.org/10.1134/S1063782620120295
Final published version

M. O. Petrushkov
D. S. Abramkin
E. A. Emelyanov
M. A. Putyato
A. V. Vasev
D. I. Loshkarev
M. Yu Yesin
O. S. Komkov
D. D. Firsov
V. V. Preobrazhenskii

Original language	English
Pages (from-to)	1548-1554
Number of pages	7
Journal	Semiconductors
Volume	54
Issue number	12
DOIs	https://doi.org/10.1134/S1063782620120295
Publication status	Published - Dec 2020

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY

Research areas

film crystallographic orientation, GaSb on Si(001), molecular-beam epitaxy, structural perfection, surface morphology, EPITAXY, INITIAL GROWTH STAGE, LAYER, GAAS

ID: 26205370