1. 2018
  2. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Abramkin, D. S., Gutakovskii, A. K. & Shamirzaev, T. S., 21 Mar 2018, In: Journal of Applied Physics. 123, 11, 11 p., 115701.

    Research output: Contribution to journalArticlepeer-review

  3. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

    Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Y., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V. & Shamirzaev, T. S., 1 Mar 2018, In: Optoelectronics, Instrumentation and Data Processing. 54, 2, p. 181-186 6 p.

    Research output: Contribution to journalArticlepeer-review

  4. 2017
  5. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

    Nikiforov, V. E., Abramkin, D. S. & Shamirzaev, T. S., 1 Nov 2017, In: Semiconductors. 51, 11, p. 1513-1516 4 p.

    Research output: Contribution to journalArticlepeer-review

  6. Determining the structure of energy in heterostructures with diffuse interfaces

    Abramkin, D. S., Bakarov, A. K., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Bulletin of the Russian Academy of Sciences: Physics. 81, 9, p. 1052-1057 6 p.

    Research output: Contribution to journalArticlepeer-review

  7. Formation of low-dimensional structures in the InSb/AlAs heterosystem

    Abramkin, D. S., Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Semiconductors. 51, 9, p. 1233-1239 7 p.

    Research output: Contribution to journalArticlepeer-review

Previous 1 2 Next

ID: 3443736