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Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

Research output: Contribution to journal › Article › peer-review

Section of Automation of Physical and Technical Research

DOI

https://doi.org/10.1134/S1063782619050026
Final published version

Original language	English
Pages (from-to)	703-710
Number of pages	8
Journal	Semiconductors
Volume	53
Issue number	5
DOIs	https://doi.org/10.1134/S1063782619050026
Publication status	Published - 1 May 2019

Research areas

QUANTUM DOTS, DEFORMATION POTENTIALS, V SEMICONDUCTORS, SPIN DYNAMICS, INSB/ALAS, EXCITON, GAAS

OECD FOS+WOS

ID: 20159963