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  1. 2023

  2. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

    Abramkin, D. S., Petrushkov, M. O., Bogomolov, D. B., Emelyanov, E. A., Yesin, M. Y., Vasev, A. V., Bloshkin, A. A., Koptev, E. S., Putyato, M. A., Atuchin, V. V. & Preobrazhenskii, V. V., 28 Feb 2023, In: Nanomaterials. 13, 5, 910.

    Research output: Contribution to journal › Article › peer-review

  3. 2022

  4. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

    Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Komkov, O. S., Firsov, D. D., Vasev, A. V., Yesin, M. Y., Bakarov, A. K., Loshkarev, I. D., Gutakovskii, A. K., Atuchin, V. V. & Preobrazhenskii, V. V., 14 Dec 2022, In: Nanomaterials. 12, 24, 4449.

    Research output: Contribution to journal › Article › peer-review

  5. Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories

    Abramkin, D. S. & Atuchin, V. V., Nov 2022, In: Nanomaterials. 12, 21, 3794.

    Research output: Contribution to journal › Article › peer-review

  6. 2021

  7. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

    Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K. & Preobrazhenskiy, V. V., Feb 2021, In: Semiconductors. 55, 2, p. 194-201 8 p.

    Research output: Contribution to journal › Article › peer-review

  8. 2020

  9. Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

    Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Vasev, A. V., Loshkarev, D. I., Yesin, M. Y., Komkov, O. S., Firsov, D. D. & Preobrazhenskii, V. V., Dec 2020, In: Semiconductors. 54, 12, p. 1548-1554 7 p.

    Research output: Contribution to journal › Article › peer-review

  10. Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si/In2O3:Er films

    Feklistov, K. V., Lemzyakov, A. G., Prosvirin, I. P., Gismatulin, A. A., Shklyaev, A. A., Zhivodkov, Y. A., Krivyakin, G., Komonov, A. I., Kozhukhov, A. S., Spesivsev, E. V., Gulyaev, D. V., Abramkin, D. S., Pugachev, A. M., Esaev, D. G. & Sidorov, G. Y., Dec 2020, In: Materials Research Express. 7, 12, 11 p., 125903.

    Research output: Contribution to journal › Article › peer-review

  11. 2019

  12. GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., Emelyanov, E. A., Preobrazhenskii, V. V., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1143-1147 5 p.

    Research output: Contribution to journal › Article › peer-review

  13. Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

    Abramkin, D. S. & Shamirzaev, T. S., 1 May 2019, In: Semiconductors. 53, 5, p. 703-710 8 p.

    Research output: Contribution to journal › Article › peer-review

  14. 2018

  15. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1484-1490 7 p.

    Research output: Contribution to journal › Article › peer-review

  16. Spinodal Decomposition in InSb/AlAs Heterostructures

    Abramkin, D. S., Bakarov, A. K., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1392-1397 6 p.

    Research output: Contribution to journal › Article › peer-review

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