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GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782619090021
Final published version

D. S. Abramkin
M. O. Petrushkov
M. A. Putyato
B. R. Semyagin
E. A. Emelyanov
V. V. Preobrazhenskii
A. K. Gutakovskii
T. S. Shamirzaev

Original language	English
Pages (from-to)	1143-1147
Number of pages	5
Journal	Semiconductors
Volume	53
Issue number	9
DOIs	https://doi.org/10.1134/S1063782619090021
Publication status	Published - 1 Sept 2019

Research areas

GaP on Si, hybrid substrates, molecular-beam epitaxy, photoluminescence, quantum wells, SEMICONDUCTORS, SILICON, GAP

OECD FOS+WOS

ID: 21468001