Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration › Research Explorer

Novosibirsk State University's Research Portal

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.3390/nano12244449
Final published version

Mikhail O Petrushkov
Demid S Abramkin
Eugeny A Emelyanov
Mikhail A Putyato
Oleg S Komkov
Dmitrii D Firsov
Andrey V Vasev
Mikhail Yu Yesin
Askhat K Bakarov
Ivan D Loshkarev
Anton K Gutakovskii
Victor V Atuchin
Valery V Preobrazhenskii

Original language	English
Article number	4449
Journal	Nanomaterials
Volume	12
Issue number	24
DOIs	https://doi.org/10.3390/nano12244449
Publication status	Published - 14 Dec 2022

Research areas

III-V/Si integration, dislocation filter, low-temperature GaAs, molecular-beam epitaxy, self-assembled quantum dots

OECD FOS+WOS

2.1.NS NANOSCIENCE & NANOTECHNOLOGY
2.05.PM MATERIALS SCIENCE, MULTIDISCIPLINARY
1.03.UB PHYSICS, APPLIED
1.04.DY CHEMISTRY, MULTIDISCIPLINARY

ID: 42511486