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  1. 2019

  2. Nanocrystalline diamond films heavily doped by boron: Structure, optical and electrical properties

    Volodin, V. A., Cherkova, S. G., Kumar, V., Sachkov, V. A., Mortet, V., Taylor, A., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Jan 2019, International Conference on Micro- and Nano-Electronics 2018. Lukichev, V. F. & Rudenko, K. V. (eds.). The International Society for Optical Engineering, Vol. 11022. p. 25 10 p. 110221G. (Proceedings of SPIE; vol. 11022).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  3. Silicon oxides and silicon nitrides: Structure, properties and applications in memristors

    Volodin, V. A., Kamaev, G. N., Kruchinin, V. N. & Gritsenko, V. A., 1 Jan 2019, International Conference on Micro- and Nano-Electronics 2018. Lukichev, V. F. & Rudenko, K. V. (eds.). The International Society for Optical Engineering, Vol. 11022. p. 33 8 p. 1102212. (Proceedings of SPIE; vol. 11022).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  4. Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO 2 multilayer heterostructures

    Kamaev, G. N., Cherkova, S. G., Gismatulin, A. A., Volodin, V. A. & Skuratov, V. A., 1 Jan 2019, International Conference on Micro- and Nano-Electronics 2018. Lukichev, V. F. & Rudenko, K. V. (eds.). The International Society for Optical Engineering, Vol. 11022. p. 71 6 p. 1102213. (Proceedings of SPIE; vol. 11022).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  5. 2018

  6. Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers

    Tyschenko, I. E., Volodin, V. A., Cherkov, A. G., Stoffel, M., Rinnert, H., Vergnat, M. & Popov, V. P., 1 Dec 2018, In: Journal of Luminescence. 204, p. 656-662 7 p.

    Research output: Contribution to journal › Article › peer-review

  7. Aluminum-induced crystallization of silicon suboxide thin films

    Zamchiy, A. O., Baranov, E. A., Khmel, S. Y., Volodin, V. A., Vdovin, V. I. & Gutakovskii, A. K., 1 Sept 2018, In: Applied Physics A: Materials Science and Processing. 124, 9, 4 p., 646.

    Research output: Contribution to journal › Article › peer-review

  8. On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge: SiO2 Films

    Volodin, V. A., Rui, Z., Krivyakin, G. K., Antonenko, A. K., Stoffel, M., Rinnert, H. & Vergnat, M., 1 Sept 2018, In: Semiconductors. 52, 9, p. 1178-1187 10 p.

    Research output: Contribution to journal › Article › peer-review

  9. Nanoscale potential fluctuations in nonstoichiometrics tantalum oxide

    Gritsenko, V. A., Volodin, V. A., Perevalov, T. V., Kruchinin, V. N., Gerasimova, A. K., Aliev, V. S. & Prosvirin, I. P., 15 Aug 2018, In: Nanotechnology. 29, 42, p. 425202 9 p., 425202.

    Research output: Contribution to journal › Article › peer-review

  10. Nanostructuring few-layer graphene films with swift heavy ions for electronic application: Tuning of electronic and transport properties

    Nebogatikova, N. A., Antonova, I. V., Erohin, S. V., Kvashnin, D. G., Olejniczak, A., Volodin, V. A., Skuratov, A. V., Krasheninnikov, A. V., Sorokin, P. B. & Chernozatonskii, L. A., 14 Aug 2018, In: Nanoscale. 10, 30, p. 14499-14509 11 p.

    Research output: Contribution to journal › Article › peer-review

  11. Atomic and Electronic Structures of Metal-Rich Noncentrosymmetric ZrOx

    Gritsenko, V. A., Perevalov, T. V., Volodin, V. A., Kruchinin, V. N., Gerasimova, A. K. & Prosvirin, I. P., 1 Aug 2018, In: JETP Letters. 108, 4, p. 226-230 5 p.

    Research output: Contribution to journal › Article › peer-review

  12. Raman scattering in boron doped nanocrystalline diamond films: Manifestation of Fano interference and phonon confinement effect

    Volodin, V. A., Mortet, V., Taylor, A., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Aug 2018, In: Solid State Communications. 276, p. 33-36 4 p.

    Research output: Contribution to journal › Article › peer-review

  13. On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon

    Zhigunov, D. M., Kamaev, G. N., Kashkarov, P. K. & Volodin, V. A., 9 Jul 2018, In: Applied Physics Letters. 113, 2, 4 p., 023101.

    Research output: Contribution to journal › Article › peer-review

  14. Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method

    Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Volodin, V. A., Sharafutdinov, M. R. & Khmel, S. Y., 1 Jun 2018, In: Vacuum. 152, p. 319-326 8 p.

    Research output: Contribution to journal › Article › peer-review

  15. Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations

    Volodin, V. A., Sachkov, V. A. & Sinyukov, M. P., 1 Jun 2018, In: Semiconductors. 52, 6, p. 717-722 6 p.

    Research output: Contribution to journal › Article › peer-review

  16. Optical Properties of Nonstoichiometric Tantalum Oxide TaOx (x < 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

    Kruchinin, V. N., Volodin, V. A., Perevalov, T. V., Gerasimova, A. K., Aliev, V. S. & Gritsenko, V. A., 1 Jun 2018, In: Optics and Spectroscopy (English translation of Optika i Spektroskopiya). 124, 6, p. 808-813 6 p.

    Research output: Contribution to journal › Article › peer-review

  17. Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

    Volodin, V. A., Gritsenko, V. A. & Chin, A., 1 May 2018, In: Technical Physics Letters. 44, 5, p. 424-427 4 p.

    Research output: Contribution to journal › Article › peer-review

  18. New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

    Gorokhov, E. B., Astankova, K. N., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 May 2018, In: Semiconductors. 52, 5, p. 628-631 4 p.

    Research output: Contribution to journal › Article › peer-review

  19. Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

    Tyschenko, I. E., Krivyakin, G. K. & Volodin, V. A., 1 Feb 2018, In: Semiconductors. 52, 2, p. 268-272 5 p.

    Research output: Contribution to journal › Article › peer-review

  20. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A., Volodin, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 7 Jan 2018, In: Journal of Applied Physics. 123, 1, 8 p., 015304.

    Research output: Contribution to journal › Article › peer-review

  21. 2017

  22. Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Oct 2017, In: Semiconductors. 51, 10, p. 1370-1376 7 p.

    Research output: Contribution to journal › Article › peer-review

  23. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

    Tyschenko, I. E., Cherkov, A. G., Volodin, V. A. & Voelskow, M., 1 Sept 2017, In: Semiconductors. 51, 9, p. 1240-1246 7 p.

    Research output: Contribution to journal › Article › peer-review

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