Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions › Research Explorer

DOI

https://doi.org/10.1134/S1063782619110046
Final published version

S. G. Cherkova
V. A. Skuratov
V. A. Volodin

Original language	English
Pages (from-to)	1427-1430
Number of pages	4
Journal	Semiconductors
Volume	53
Issue number	11
DOIs	https://doi.org/10.1134/S1063782619110046
Publication status	Published - 6 Nov 2019

Research areas

defects in silicon, photoluminescence, swift heavy ions, ROOM-TEMPERATURE, PHOTOLUMINESCENCE, DEFECT, RADIATION, ELECTROLUMINESCENCE, DAMAGE, LAYERS

OECD FOS+WOS

ID: 23568869