Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition › Research Explorer

DOI

https://doi.org/10.1134/S1063783419120370
Final published version

T. V. Perevalov
V. A. Volodin
Yu. N. Novikov
G. N. Kamaev
V. A. Gritsenko
I. P. Prosvirin

Original language	English
Pages (from-to)	2560-2568
Number of pages	9
Journal	Physics of the Solid State
Volume	61
Issue number	12
DOIs	https://doi.org/10.1134/S1063783419120370
Publication status	Published - Dec 2019

OECD FOS+WOS

Research areas

silica (SiO2), Raman scattering, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, plasma enhanced chemical vapor deposition, resistive random-access memory, ELECTRONIC-STRUCTURES, AMORPHOUS SI, SILICON, PHOTOEMISSION, DEFECTS

ID: 23719858