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  1. Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition

    Perevalov, T. V., Gritsenko, V. A., Gutakovskii, A. K. & Prosvirin, I. P., 1 Jan 2019, In: JETP Letters. 109, 2, p. 116-120 5 p.

    Research output: Contribution to journal › Article › peer-review

  2. Structure, Volatility, and Luminescence of Phenanthroline Adducts with Lanthanide Tris-Dipivaloylmethanates

    Stabnikov, P. A., Urkasym kyzy, S., Trubin, S. V., Pervukhina, N. V., Korolkov, I. V., Berezin, A. S. & Morozova, N. B., 1 Jan 2020, In: Journal of Structural Chemistry. 61, 1, p. 101-108 8 p.

    Research output: Contribution to journal › Article › peer-review

  3. Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux

    Dmitriev, D. V., Kolosovsky, D. A., Fedosenko, E. V., Toropov, A. I. & Zhuravlev, K. S., Nov 2021, In: Semiconductors. 55, 11, p. 823-827 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

    Shklyaev, A. A., Romanyuk, K. N., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 325-344 20 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  5. Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

    Novikova, N. N., Yakovlev, V. A., Klimin, S. A., Malin, T. V., Gilinsky, A. M. & Zhuravlev, K. S., 1 Jul 2019, In: Optics and Spectroscopy. 127, 1, p. 36-39 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. Surface-Tip-enhanced Raman Scattering by CdSe Nanocrystals on Plasmonic Substrates

    Milekhin, I. A., Milekhin, A. G. & Zahn, D. R. T., 1 Jul 2022, In: Nanomaterials. 12, 13, 2197.

    Research output: Contribution to journal › Review article › peer-review

  7. Suspended quantum point contact with triple channel selectively driven by side gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., 7 Oct 2019, In: Applied Physics Letters. 115, 15, 152101.

    Research output: Contribution to journal › Article › peer-review

  8. Swift heavy-ion irradiation of graphene oxide: Localized reduction and formation of sp-hybridized carbon chains

    Olejniczak, A., Nebogatikova, N. A., Frolov, A. V., Kulik, M., Antonova, I. V. & Skuratov, V. A., 1 Jan 2019, In: Carbon. 141, p. 390-399 10 p.

    Research output: Contribution to journal › Article › peer-review

  9. Synthesis of samarium oxysulfateSm2O2SO4 in the high-temperature oxidation reaction and its structural, thermal and luminescent properties

    Denisenko, Y. G., Sal'nikova, E. I., Basova, S. A., Molokeev, M. S., Krylov, A. S., Aleksandrovsky, A. S., Oreshonkov, A. S., Atuchin, V. V., Volkova, S. S., Khritokhin, N. A. & Andreev, O. V., 14 Mar 2020, In: Molecules. 25, 6, 15 p., 1330.

    Research output: Contribution to journal › Article › peer-review

  10. The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2: La films

    Perevalov, T., Prosvirin, I. P., Suprun, E. A., Mehmood, F., Mikolajick, T., Schroeder, U. & Gritsenko, V. A., Dec 2021, In: Journal of science-Advanced materials and devices. 6, 4, p. 595-600 6 p.

    Research output: Contribution to journal › Article › peer-review

  11. The charge transport mechanism in amorphous boron nitride

    Novikov, Y. N. & Gritsenko, V. A., 15 Sept 2020, In: Journal of Non-Crystalline Solids. 544, 4 p., 120213.

    Research output: Contribution to journal › Article › peer-review

  12. The DA-pHEMT heterostructures for power microwave transistors

    Zhuravlev, K. S., Protasov, D. Y., Gulyaev, D. V., Bakarov, A. K., Toropov, A. I., Lapin, V. G., Lukashin, V. M. & Pashkovskii, A. B., 1 May 2019, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 3 p. 8804008. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  13. The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures

    Sonmez, F., Ardali, S., Lisesivdin, S. B., Malin, T., Mansurov, V., Zhuravlev, K. & Tiras, E., Jun 2021, In: Journal of Physics Condensed Matter. 33, 25, 255501.

    Research output: Contribution to journal › Article › peer-review

  14. The effect of passivation layer, doping and spacer layer on electron- longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures

    Sonmez, F., Ardali, S., Atmaca, G., Lisesivdin, S. B., Malin, T., Mansurov, V., Zhuravlev, K. & Tiras, E., Feb 2021, In: Materials Science in Semiconductor Processing. 122, 8 p., 105449.

    Research output: Contribution to journal › Article › peer-review

  15. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

    Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I. & Zhuravlev, K. S., 1 Feb 2019, In: Technical Physics Letters. 45, 2, p. 180-184 5 p.

    Research output: Contribution to journal › Article › peer-review

  16. The modification of optical properties of the surfaces by the glancing angle deposition of TiO2

    Lemzyakov, A., Konstantin, K., Porosev, V., Azarov, I. & Shklyaev, A., 17 Nov 2020, Synchrotron and Free Electron Laser Radiation: Generation and Application, SFR 2020. Knyazev, B. & Vinokurov, N. (eds.). American Institute of Physics Inc., 060008. (AIP Conference Proceedings; vol. 2299).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  17. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

    Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Aliev, V. S., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V. & Chin, A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 493-504 12 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  18. The reentrant four-layer quasi-elliptic bandstop filter

    Atuchin, V. V., Gorbachev, A. P., Khrustalev, V. A. & Tarasenko, N. V., 1 Jan 2019, In: Electronics (Switzerland). 8, 1, 20 p., 81.

    Research output: Contribution to journal › Article › peer-review

  19. The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

    Rahaman, M., Milekhin, A. G., Mukherjee, A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 1 May 2019, In: Faraday Discussions. 214, p. 309-323 15 p.

    Research output: Contribution to journal › Article › peer-review

  20. Transformation of the InP(001) surface upon annealing in an arsenic flux

    Dmitriev, D. V., Kolosovsky, D. A., Gavrilova, T. A., Gutakovskii, A. K., Toropov, A. I. & Zhuravlev, K. S., Aug 2021, In: Surface Science. 710, 121861.

    Research output: Contribution to journal › Article › peer-review

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