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The DA-pHEMT heterostructures for power microwave transistors

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

Лаборатория полупроводниковых и диэлектрических материалов ФФ

DOI

https://doi.org/10.1109/IEEE-IWS.2019.8804008
Final published version

K. S. Zhuravlev
D. Yu Protasov
D. V. Gulyaev
A. K. Bakarov
A. I. Toropov
V. G. Lapin
V. M. Lukashin
A. B. Pashkovskii

Original language	English
Title of host publication	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	3
ISBN (Electronic)	9781728107165
ISBN (Print)	9781728107165
DOIs	https://doi.org/10.1109/IEEE-IWS.2019.8804008
Publication status	Published - 1 May 2019
Event	2019 IEEE MTT-S International Wireless Symposium - Guangzhou, China Duration: 19 May 2019 → 22 May 2019

Publication series

Name	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

Conference

Conference	2019 IEEE MTT-S International Wireless Symposium
Abbreviated title	IWS 2019
Country/Territory	China
City	Guangzhou
Period	19.05.2019 → 22.05.2019

Research areas

2DEG mobility, donor-acceptor doping, output power density, pHEMT, DENSITY, FIELD-EFFECT TRANSISTORS

ID: 21468981