The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

Original language	English
Title of host publication	Advances in Semiconductor Nanostructures
Subtitle of host publication	Growth, Characterization, Properties and Applications
Editors	AV Latyshev, AV Dvurechenskii, AL Aseev
Publisher	Elsevier Science Inc.
Pages	493-504
Number of pages	12
ISBN (Electronic)	9780128105139
ISBN (Print)	9780128105122
DOIs	https://doi.org/10.1016/B978-0-12-810512-2.00020-2
Publication status	Published - 1 Jan 2017

Hafnium oxide, Nanoscale fluctuations, Oxygen vacancies, Phonon-assisted tunneling, ReRAM, Transport, Traps, AMORPHOUS-SILICON OXYNITRIDE, SHORT-RANGE ORDER, MECHANISM

ID: 21754237

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