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  1. 2018

  2. Raman scattering in boron doped nanocrystalline diamond films: Manifestation of Fano interference and phonon confinement effect

    Volodin, V. A., Mortet, V., Taylor, A., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Aug 2018, In: Solid State Communications. 276, p. 33-36 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon

    Zhigunov, D. M., Kamaev, G. N., Kashkarov, P. K. & Volodin, V. A., 9 Jul 2018, In: Applied Physics Letters. 113, 2, 4 p., 023101.

    Research output: Contribution to journal › Article › peer-review

  4. Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method

    Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Volodin, V. A., Sharafutdinov, M. R. & Khmel, S. Y., 1 Jun 2018, In: Vacuum. 152, p. 319-326 8 p.

    Research output: Contribution to journal › Article › peer-review

  5. Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations

    Volodin, V. A., Sachkov, V. A. & Sinyukov, M. P., 1 Jun 2018, In: Semiconductors. 52, 6, p. 717-722 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. Optical Properties of Nonstoichiometric Tantalum Oxide TaOx (x < 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

    Kruchinin, V. N., Volodin, V. A., Perevalov, T. V., Gerasimova, A. K., Aliev, V. S. & Gritsenko, V. A., 1 Jun 2018, In: Optics and Spectroscopy (English translation of Optika i Spektroskopiya). 124, 6, p. 808-813 6 p.

    Research output: Contribution to journal › Article › peer-review

  7. Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

    Volodin, V. A., Gritsenko, V. A. & Chin, A., 1 May 2018, In: Technical Physics Letters. 44, 5, p. 424-427 4 p.

    Research output: Contribution to journal › Article › peer-review

  8. New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

    Gorokhov, E. B., Astankova, K. N., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 May 2018, In: Semiconductors. 52, 5, p. 628-631 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

    Tyschenko, I. E., Krivyakin, G. K. & Volodin, V. A., 1 Feb 2018, In: Semiconductors. 52, 2, p. 268-272 5 p.

    Research output: Contribution to journal › Article › peer-review

  10. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A., Volodin, V. A., Stoffel, M., Rinnert, H. & Vergnat, M., 7 Jan 2018, In: Journal of Applied Physics. 123, 1, 8 p., 015304.

    Research output: Contribution to journal › Article › peer-review

  11. 2017

  12. Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    Krivyakin, G. K., Volodin, V. A., Shklyaev, A. A., Mortet, V., More-Chevalier, J., Ashcheulov, P., Remes, Z., Stuchliková, T. H. & Stuchlik, J., 1 Oct 2017, In: Semiconductors. 51, 10, p. 1370-1376 7 p.

    Research output: Contribution to journal › Article › peer-review

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