Original languageEnglish
Pages (from-to)754-758
Number of pages5
JournalSemiconductors
Volume54
Issue number7
DOIs
Publication statusPublished - 1 Jul 2020

    Research areas

  • crystallization kinetics, germanium, interfaces, RAMAN-SCATTERING, HYDROGENATED SILICON

    OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

ID: 24613923