Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon › Research Explorer

Novosibirsk State University's Research Portal

Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063785020060048
Final published version

A. V. Kolchin
D. V. Shuleiko
A. V. Pavlikov
S. V. Zabotnov
L. A. Golovan
D. E. Presnov
V. A. Volodin
G. K. Krivyakin
A. A. Popov
P. K. Kashkarov

Original language	English
Pages (from-to)	560-563
Number of pages	4
Journal	Technical Physics Letters
Volume	46
Issue number	6
DOIs	https://doi.org/10.1134/S1063785020060048
Publication status	Published - 1 Jun 2020

Research areas

pulsed laser annealing, Raman scattering, scanning electron microscopy, thin-film silicon and germanium structures

OECD FOS+WOS

ID: 26145448