High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	1900247
Number of pages	6
Journal	Physica Status Solidi (B) Basic Research
Volume	257
Issue number	6
DOIs	https://doi.org/10.1002/pssb.201900247
Publication status	Published - 1 Jun 2020

a-SiC:H, boron-doped diamond, fluorine-doped tin oxide, I–V characteristics, PIN diodes, DENSITY, PHOTOLUMINESCENCE, CARBIDE, H, GAP STATES, I-V characteristics, a-SiC

ID: 24075227